Mitsubishi Electric Unveils New SiC-MOSFET Technology for Electric Vehicles

Mitsubishi Electric Unveils New SiC-MOSFET Technology for Electric Vehicles

Mitsubishi Electric has announced the upcoming shipment of samples of its fifth-generation silicon carbide (SiC) MOSFET bare dies, a new semiconductor technology designed to improve the efficiency and performance of electric and hybrid vehicle powertrains.

Mitsubishi Electric said it will begin shipping samples of two new fifth-generation SiC-MOSFET bare die products from late June, targeting applications in electric vehicle (EV), plug-in hybrid electric vehicle (PHEV), and other electrified vehicle power systems. The announcement was made on June 4.

The newly developed power semiconductors are intended for use in inverters and eAxles, key components that manage power delivery to vehicle drive motors. According to the company, the devices incorporate its proprietary trench structure technology and achieve an industry-leading level of low on-resistance, approximately 25% lower than comparable existing products. This reduction is expected to improve power conversion efficiency and support the development of more compact vehicle power systems.

Mitsubishi Electric stated that the new devices are designed to help manufacturers enhance the performance of xEV inverters and eAxles while contributing to longer driving range and improved energy efficiency. The company also highlighted its manufacturing process technology, which is intended to limit performance degradation over time and reduce fluctuations in power loss and on-resistance during operation.

The fifth-generation SiC-MOSFET bare dies are expected to support the growing demand for higher-efficiency power electronics as automakers continue expanding their electric vehicle offerings. Silicon carbide semiconductors are increasingly being adopted across the automotive sector because they can handle higher voltages, operate at higher temperatures, and reduce energy losses compared with conventional silicon-based devices.

Mitsubishi Electric plans to showcase the new products at the PCIM Expo & Conference 2026, scheduled to take place from June 9 to 11 in Nuremberg, Germany. The company also intends to display the technology at exhibitions in Japan, China and other international markets.

Source: Information based on an official announcement issued by Mitsubishi Electric
Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples | MITSUBISHI ELECTRIC Global website

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Mitsubishi Electric has announced the upcoming shipment of samples of its fifth-generation silicon carbide (SiC) MOSFET bare dies, a new semiconductor technology designed to improve the efficiency and performance of electric and hybrid vehicle powertrains.

Mitsubishi Electric said it will begin shipping samples of two new fifth-generation SiC-MOSFET bare die products from late June, targeting applications in electric vehicle (EV), plug-in hybrid electric vehicle (PHEV), and other electrified vehicle power systems. The announcement was made on June 4.

The newly developed power semiconductors are intended for use in inverters and eAxles, key components that manage power delivery to vehicle drive motors. According to the company, the devices incorporate its proprietary trench structure technology and achieve an industry-leading level of low on-resistance, approximately 25% lower than comparable existing products. This reduction is expected to improve power conversion efficiency and support the development of more compact vehicle power systems.

Mitsubishi Electric stated that the new devices are designed to help manufacturers enhance the performance of xEV inverters and eAxles while contributing to longer driving range and improved energy efficiency. The company also highlighted its manufacturing process technology, which is intended to limit performance degradation over time and reduce fluctuations in power loss and on-resistance during operation.

The fifth-generation SiC-MOSFET bare dies are expected to support the growing demand for higher-efficiency power electronics as automakers continue expanding their electric vehicle offerings. Silicon carbide semiconductors are increasingly being adopted across the automotive sector because they can handle higher voltages, operate at higher temperatures, and reduce energy losses compared with conventional silicon-based devices.

Mitsubishi Electric plans to showcase the new products at the PCIM Expo & Conference 2026, scheduled to take place from June 9 to 11 in Nuremberg, Germany. The company also intends to display the technology at exhibitions in Japan, China and other international markets.

Source: Information based on an official announcement issued by Mitsubishi Electric
Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples | MITSUBISHI ELECTRIC Global website